HexaTech, Inc. has announced the immediate production release of its new 100 mm diameter single-crystal aluminum nitride (AlN) substrate, marking a significant step in the company’s efforts to scale up manufacturing of the advanced semiconductor material. The launch builds on its earlier three-inch diameter substrate introduction and strengthens its product portfolio for commercial optoelectronic and high-power radio frequency (RF) applications.
The company, which describes itself as the world’s leading commercial supplier of single-crystal physical vapour transport (PVT)-grown AlN substrates, said the new product combines material performance with production scale and customer value.
The latest product launch follows a focused development programme spanning approximately 20 years, supported by both public and private investment. According to HexaTech CEO John Goehrke, the achievement will provide a foundation for the company’s future expansion plans.
“This tremendous accomplishment is the result of a focused development program, supported over the previous 20 years by both public and private investment, and the outstanding HexaTech team. This success will be the basis of our future expansion efforts, as we drive toward 150 mm and beyond, and close the gap with other high-performance wide bandgap materials,” Goehrke said.
HexaTech’s Manager of Research and Development, Dr Rafael Dalmau, highlighted the company’s established focus on substrate quality, noting that the 100 mm product continues its track record of delivering aluminum nitride material with high structural and surface quality.